smd type ic smd type ic KRF7805Z features absolute maximum ratings ta = 25 parameter symbol rating unit continuous drain current, v gs @ 10v,t a =25 i d 16 continuous drain current, v gs @ 10v,t a =70 i d 12 pulsed drain current*1 i dm 120 power dissipation ta = 25 *1 p d 2.5 w power dissipation ta = 70 *1 p d 1.6 w linear derating factor 0.02 w/ gate-to-source voltage v gs 20 v drain-source voltage v ds 30 v operating junction and storage temperature range t j ,t stg -55to+150 junction-to-ambient r ja 50 /w junction-to-drain lead r jl 20 /w single pulse avalanche energy*3 e as 72 mj avalanche current *2 i ar 12 a *1 pulse width 400 s; duty cycle 2%. *2 repetitive rating; pulse width limited by max. junction temperature. *3 starting t j =25 , l = 0.94mh,r g =25 ,i as = 12a. a smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d = 250 a 30 v breakdown voltage temp. coefficient v(br)dss / t j i d = 1ma,reference to 25 0.023 v/ v gs = 10v, i d = 16a*1 5.5 44 v gs =4.5v, i d = 13a*1 7.0 gate threshold voltage v gs(th) 1.35 2.25 v gate threshold voltage coefficient v gs(th) -4.7 mv/ forward transconductance g fs v ds = 15v, i d = 12a*1 64 s v ds = 24v, v gs =0v 1.0 v ds = 24v, v gs =0v,t j = 125 150 gate-to-source forward leakage v gs = 20v 100 gate-to-source reverse leakage v gs = -20v -100 total gate charge q g 18 27 gate-to-source charge q gs1 4.7 gate-to-source charge q gs2 1.6 gate-to-drain ("miller") charge q gd 6.2 gate charge overdrive q godr 5.5 switch charge (qgs2 + qgd) q sw 7.8 output charge q oss v ds = 16v, v gs =0v 10 turn-on delay time t d(on) v dd = 15v 11 rise time t r i d = 12a 10 turn-off delay time t d(off) v gs =4.5v 14 fall time t f clamped inductive load 3.7 input capacitance c iss v gs = 0v 2080 output capacitance c oss v ds = 15v 480 reverse transfer capacitance c rss f= 1.0mhz 220 continuous source current body diode) i s 3.1 pulsed source current body diode) *2 i sm 120 diode forward voltage v sd t j =25 ,i s = 12a, v gs =0v*1 1.0 v reverse recovery time t rr t j =25 ,i f = 12a.v dd =15v 29 440 ns reverse recoverycharge q rr d i /d t = 100a/ s*1 20 30 nc forward turn-on time ton intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) *1 pulse width 400 s; duty cycle 2%. *2 repetitive rating; pulse width limited bymax static drain-to-source on-resistance r ds(on) v ds =v gs ,i d = 250 a i d = 12a,v ds = 15v,v gs =4.5v,*1 i dss ns a i gss pf nc drain-to-source leakage current a na m smd type ic smd type ic KRF7805Z smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com
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